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The announcement could deliver significant performance improvements for organizations ramping up AI development.
We stacked 16 DRAM chips to realize 48 GB capacity and applied Advanced MR-MUF technology proven for mass production.
In addition, we are developing hybrid bonding technology as a backup process, he said.
HBM4 offers over 10 Gbps per pin compared to the high-end maximum of 9.2 Gbps offered by its predecessor.
All told, this will unlock bandwidth capabilities of up to 1.5 TBps compared to HBM3es 1.2-plus TBps.
Moreover, manufacturers expect HBM4 will also deliver lower latency.
This next-generation tech can enable warp-free stacking of chips that are 40% thinner than conventional alternatives.
This also delivers improved heat dissipation due to the use of new protective materials, the company said.
Similarly, hybrid bonding has also unlocked marked improvements.
This reduces the overall thickness of the chip, enabling high stacking, the company said in an announcement.
SK hynix is looking at both Advanced MR-MUF and hybrid bonding methods for 16-layer and higher HBM products.
